Rzhanov Institute of Semiconductor Physics
 | |
| Founder(s) | Anatoly Rzhanov |
|---|---|
| Established | 1964 |
| Director | Alexander Latyshev |
| Owner | Siberian Branch of the Russian Academy of Sciences |
| Address | Lavrentyev Prospekt 13, Novosibirsk, 630090, Russia |
| Location | , Russia |
| Website | www |
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS (Russian: Институт физики полупроводников имени А. В. Ржанова СО РАН) is a research institute in Akademgorodok of Novosibirsk, Russia. It was founded in 1964.
History[edit]
The institute was created in 1964 by merging the Institute of Solid State Physics and Semiconductor Electronics and the Institute of Radiophysics and Electronics.[1] In the 1970s, the institute began to work on developing molecular-beam epitaxy methods.[1]
Scientific activity[edit]
Development of the physical fundamentals of microelectronics, acousto-electronics, microphotoelectronics, quantum electronics; the study of physical phenomena in semiconductor thin-film structures etc.[2]
