Fluctuation electron microscopy
Fluctuation electron microscopy (FEM), originally called Variable Coherence Microscopy before decoherence effects in the sample rendered that naming moot, is a technique in electron microscopy that probes nanometer-scale or "medium-range" order in disordered materials. The first studies were performed on amorphous Si (Treacy and Gibson 1997)[1] and later on hydrogenated amorphous silicon.[2]
References[edit]
- ^ Treacy, Gibson (1997). "Diminished medium-range order observed in annealed amorphous germanium". Physical Review Letters. 78: 1074. doi:10.1103/PhysRevLett.78.1074.
- ^ P. M. Voyles; J. E. Gerbi; M. M. J. Treacy; J. M. Gibson & J. R. Abelson (2001). "Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature". Physical Review Letters. 86: 5514. doi:10.1103/PhysRevLett.86.5514.
| Basics | |||||||
|---|---|---|---|---|---|---|---|
| Electron interaction with matter | |||||||
| Instrumentation | |||||||
| Microscopes |
| ||||||
| Techniques |
| ||||||
| Others |
| ||||||
 | This condensed matter physics-related article is a stub. You can help Wikipedia by expanding it. |