File:Schematic cross-section of a device with corresponding material layers..png

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Schematic_cross-section_of_a_device_with_corresponding_material_layers..png(322 × 256 pixels, file size: 63 KB, MIME type: image/png)

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English: Schematic cross-section of a device with corresponding material layers. The floating gate (FG), triple-barrier resonant-tunneling structure (TBRT), and readout channel are highlighted. Arrows indicate the direction of electron flow during program/erase operations. (Image credit: Lancaster University)
Date
Source ULTRARAM: A Low-Energy, High-Endurance, Compound-Semiconductor Memory on Silicon
Author Peter D. Hodgson,Dominic Lane,Peter J. Carrington,Evangelia Delli,Richard Beanland,Manus Hayne

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8 April 2022

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current07:23, 8 April 2022Thumbnail for version as of 07:23, 8 April 2022322 × 256 (63 KB)Avast rumaliUploaded while editing "User:Avast_rumali/sandbox" on en.wikipedia.org
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