File:AlInSb Bandgaps Room Temperature.png

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Composition dependence of the direct and indirect band gaps of AlInSb at room temperature (T = 300 K).

Source

Created in MATLAB from the parameters given in: Vurgaftman, I., Meyer, J. R. & Ram-Mohan, L. R. Band parameters for III–V compound semiconductors and their alloys. Journal of Applied Physics 89, 5815–5875 (2001); Adachi, S. Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2–4 μm optoelectronic device applications. Journal of Applied Physics 61, 4869–4876 (1987).

Date

2024-01-31

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MaterialsPsych

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